Alloy Junction Transistor – Definition, Working, Symbol, Types, Uses & Characteristics

The alloy transistor or alloy junction transistor is a germanium BJT (Bipolar Junction Transistor) created at General Electric and RCA in 1951 as an improvement over the previous developed Grown Junction Transistor. The alloy junction technique is likewise called the fused technique.

The alloy junction transistor is comprised of a flimsy wafer of n-type germanium material framing the base, with two dots of indium (acceptor atoms) appended to inverse sides of the n-type material.

Image Source: physics-and-radio-electronics

The entire construction is raised to a high temperature, over the dissolving point of indium however below that of germanium.

A tiny portion of indium breaks up and goes into the wafer of n-type material. In this way, the p-type material is made at different sides of the n-type wafer.

The upper p-type material is the emitter, the lower p-type material is the collector, and the middle thin n-type material is the base.

The collector (lower p-type material) is made bigger than the emitter (upper p-type material) to withstand the heavy current.

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