The Grown Junction Transistor was created on June 23, 1948, by William Shockley. It was created a half year after the principal bipolar point-contact transistor.
The Czochralski strategy is utilized to frame the two p-n junctions of a grown junction transistor.
The NPN grown junction transistor is comprised of a single crystal of semiconductor material (silicon or germanium). The impurity concentration of this semiconductor material is changed during the crystal drawing activity by adding n-type or p-type atoms as required.
